History of Technology in India, Vol. I: From Antiquity to c. 1200 A.D. v1.c13.s2.t5.11
History of Technology in India, Vol. I: From Antiquity to c. 1200 A.D. v1.c13.s2.t5.11
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v1.c13.s2.t5.11
| | | % Ag | % ZnO | % Pbo | % Fe | Reference |
| 1. | Coarse fraction of carrier (residue) | 0.023 to 0.012 | 0.61 to 0.3 | 0.36 to 0.04 | — | Freestone et al. 1985 |
| 2. | Fine fraction carrier (residue) | 0.01 | 0.122 | 0.26 | — | “ |
| 3. | Charge residue loose | — | 3.04% Zn | Traces | 7.60 | Gangopadhaya et al. 1984 |
| 4. | Slag inside the report | — | 2.74% Zn | Traces | 9.52 | “ |
| 5. | (a) Retort Body | — | 2.19 | 0.3 | — | Freestone et al, 1985 |
| | (b) Retort Body | — | Traces | Traces | 4.37 | Gangopadhaya et al, 1984 |